Ravindiran, M (2020) Higher Power Conversion Efficiency on Silicon based Heterojunction Device with FeZnO Dilute Magnetic Semiconductors. IOP Conference Series: Materials Science and Engineering, 993 (1). 012159. ISSN 1757-8981
Full text not available from this repository.Abstract
Improving the power conversion efficiency of the silicon based solar cell is possible by introducing new materials in the existing device structure to form silicon based heterojunction soar cells. The present research work investigates the modelling of heterojunction solar cell made of FeZnO dilute magnetic semiconductor (DMS) sandwiched between the P and N type silicon. Realized results show that the heterojunction device has more than two folds improved efficiency when compared to the solar cell made of single crystalline silicon. © 2021 Elsevier B.V., All rights reserved.
| Item Type: | Article |
|---|---|
| Subjects: | Physics and Astronomy > Condensed Matter Physics |
| Divisions: | Engineering and Technology > Aarupadai Veedu Institute of Technology, Chennai > Bio-medical Engineering |
| Depositing User: | Unnamed user with email techsupport@mosys.org |
| Last Modified: | 04 Dec 2025 11:37 |
| URI: | https://vmuir.mosys.org/id/eprint/3307 |
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