Higher Power Conversion Efficiency on Silicon based Heterojunction Device with FeZnO Dilute Magnetic Semiconductors

Ravindiran, M (2020) Higher Power Conversion Efficiency on Silicon based Heterojunction Device with FeZnO Dilute Magnetic Semiconductors. IOP Conference Series: Materials Science and Engineering, 993 (1). 012159. ISSN 1757-8981

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Abstract

Improving the power conversion efficiency of the silicon based solar cell is possible by introducing new materials in the existing device structure to form silicon based heterojunction soar cells. The present research work investigates the modelling of heterojunction solar cell made of FeZnO dilute magnetic semiconductor (DMS) sandwiched between the P and N type silicon. Realized results show that the heterojunction device has more than two folds improved efficiency when compared to the solar cell made of single crystalline silicon. © 2021 Elsevier B.V., All rights reserved.

Item Type: Article
Subjects: Physics and Astronomy > Condensed Matter Physics
Divisions: Engineering and Technology > Aarupadai Veedu Institute of Technology, Chennai > Bio-medical Engineering
Depositing User: Unnamed user with email techsupport@mosys.org
Last Modified: 04 Dec 2025 11:37
URI: https://vmuir.mosys.org/id/eprint/3307

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