The FinFET generates a lot of effort, which leads to a higher level of control in the conditional channel. Despite its low performance, 6T static process of random-access memory is modified by circuit function design. This increases the speed of static random-access memory by reducing the bit line with loading effect. With a standard level of cell, 6T static random-access memory face challenges in terms of stability and degradation. It causes disruption in low-level power mode. With a reduced low level of threshold voltage, 6T SRAM has difficulties with output level voltage. In 6 T-type SRAM cell, the conditional transistor destroys the entire read operation. In 6 T SRAM cell, noises destroy the stored level data in nodes, which establishes a direct path between the bit line and storage nodes. We must overcome the 8T-level SRAM as a cell in their recommended read-level stability. To improve the 8T-level SRAM read level of stability, the FinFET with 6T and 8T for conditional achievement of SRAM in 8T level for static random-access memory, and 10T type for SRAM with cells has been increased to improve the need to compare different results by using micro wind as a tool. © 2022 Elsevier B.V., All rights reserved.