Earth-Abundant Nitride-Based Materials for Photovoltaics

Chinnakutti, Karthik Kumar and Anandan, Sambandam and Theerthagiri, Jayaraman (2024) Earth-Abundant Nitride-Based Materials for Photovoltaics. Springer. pp. 403-416.

Full text not available from this repository.

Abstract

Photovoltaics (PV) is a promising green and sustainable energy source. Nitride-based materials offer distinct optoelectronic properties with potential to replace conventional materials in next-generation PV devices. Their properties enhance efficiency in III-nitride semiconductors, including InN, GaN, AlN, and their alloys. This chapter provides an overview of research on III-nitride and g-C3N4-based solar cells, covering cell structures, findings, and performance in different environments. © 2024 Elsevier B.V., All rights reserved.

Item Type: Article
Subjects:
Divisions: Medicine > Vinayaka Mission's Kirupananda Variyar Medical College and Hospital, Salem > Biochemistry
Depositing User: Unnamed user with email techsupport@mosys.org
Last Modified: 27 Nov 2025 06:43
URI: https://vmuir.mosys.org/id/eprint/1751

Actions (login required)

View Item
View Item